Precision deposition using miniature-column charged particle beam arrays

ABSTRACT

Methods, devices and systems for patterning of substrates using charged particle beams without photomasks and without a resist layer. Material can be deposited onto a substrate, as directed by a design layout database, localized to positions targeted by multiple, matched charged particle beam columns. Reducing the number of process steps, and eliminating lithography steps, in localized material addition has the dual benefit of reducing manufacturing cycle time and increasing yield by lowering the probability of defect introduction. Furthermore, highly localized, precision material deposition allows for controlled variation of deposition rate and enables creation of 3D structures. Local gas injectors and detectors, and local photon injectors and detectors, are local to corresponding ones of the columns, and can be used to facilitate rapid, accurate, targeted, highly configurable substrate processing, advantageously using large arrays of said beam columns.

CROSS-REFERENCE

Priority is claimed from, and this application is a non-provisional of, Provisional Pat. App. No. 62/107,332, filed Jan. 23, 2015; Provisional Pat. App. No. 62/115,626, filed Feb. 12, 2015; and Provisional Pat. App. No. 62/151,225, filed Apr. 22, 2015, which are hereby incorporated by reference.

BACKGROUND

The present application relates to systems, devices and methods for maskless material deposition on substrates using charged particle beams; and more particularly to directly depositing material at precise locations as defined in a design layout database using multiple, matched charged particle beams, with the assistance of gas and/or photon injection, and/or of gas and/or photon process control, metrology and endpoint detection.

Note that the points discussed below may reflect the hindsight gained from the disclosed inventions, and are not necessarily admitted to be prior art.

FIG. 2A shows an example of a wafer 200 being scanned by multiple charged particle beams 204 emitted by respective miniature electrostatically-deflected beam columns 206. Individual columns 206 are able to target a portion 202 of the substrate surface with their respectively emitted beams 204.

FIG. 2B shows an example of a wafer 200. Example die 208 size and column 206 center-to-center spacing 210 (column separation) are shown. A regular grid of columns 206 (columns 206 are shown via their center positions, represented here as plusses) can use different spacing 210 in different (generally, orthogonal) directions. Die 208 size and column separation 210 are not required to (and generally, will not) correspond. Column separation 210 generally corresponds to the “writing area” of corresponding columns 206. A column's 206 “writing area” is defined as the substrate area 202 targetable by a charged particle beam 204 emitted from the column 206, taking into account stage movement.

The multiple column 206 array comprises miniature (small enough to fit multiple columns in an array) charged particle beam columns 206 arranged in a regular grid. For example, column 206 arrays with center-to-center column spacing 210 of 30 mm×30 mm have been implemented, though other column spacings 210 (e.g., 24 mm×33 mm) can also be used.

A stripe is the portion of the wafer 200 surface that a charged particle beam can target while the stage is moving predominantly in a single direction, i.e., before the stage moves laterally and switches predominant directions to give the beam access to a different stripe. A “frame” is defined herein as the portion of the wafer surface that a beam can target at a given time, corresponding to the main-field deflection area at that time, as designated by the design layout database. A frame is typically designated to be rectangular, for convenience (e.g., to tile the writing area); and smaller than the furthest extent to which the beam can be deflected (e.g., to preserve beam targeting accuracy).

“1-D” refers to 1-D gridded design rule. In a 1-D layout, optical pattern design is restricted to lines running in a single direction, with features perpendicular to the 1-D optical design formed in a complementary lithography step known as “cutting”. The complementary step can be performed using a charged particle beam lithography tool comprising an array of columns 206—for example, electrostatically-controlled miniature electron beam columns 206. A 1-D layout is separated in the design layout database into a “line pattern” and a “cut pattern”. The design layout database contains the information needed by lithography tools to pattern one or more layers on a substrate. A line pattern generally comprises an array of unidirectional lines. Cut patterns generally comprise line-cuts and holes.

Generally, line patterns are written by an optical lithography system, which can be followed by other process steps to increase the density of lines on the substrate. Cut patterns are written by a complementary (generally higher-resolution) process, such as electron beam lithography. Use of electron beam lithography for this complementary process is also called complementary e-beam lithography, or CEBL. The combination of the line-forming process followed by line-cuts written with CEBL to pattern a substrate layer is called complementary lithography.

FIG. 2C shows an example of a prior art process for depositing material onto a substrate surface.

Typically, as shown in FIG. 2C, a design layout database is used to designate where on a substrate material should be deposited 212 (e.g., to form new pattern or repair previously-formed pattern). One or more optical masks are fabricated based on the design layout database 214 using a mask making tool 216. Fabrication of an optical mask typically takes weeks and costs millions of dollars at advanced process nodes.

A pattern material (a material in which it is desired to express the pattern designated by the design layout database, e.g., a functional or structural material) is blanket deposited 218 and a hard mask is blanket deposited 220 on the substrate surface by a deposition tool 222. A photoresist layer is blanket deposited on the substrate surface 224 by a resist deposition tool 226.

“Blanket” deposition and etch generally refers to deposition and etch on the entire surface of the substrate.

“Resist” refers herein to a class of materials used in substrate lithography. When a resist is deposited on a substrate and exposed to an energy source corresponding to the type of resist (e.g., photons for a photoresist) in a chosen pattern, its chemical properties change such that when the resist is developed (in ways similar to developing a photographic film), a portion of the resist corresponding to a positive or negative image of the pattern (depending on the type of resist) will remain, allowing the pattern to be expressed in the material underlying the resist, e.g., using etch steps.

The photoresist is then exposed using the optical mask(s) 228 by an optical lithography tool 230. The exposed portion of the substrate (as designated by the optical mask(s)) is removed 232 using a resist developing tool 234, and the resulting patterned resist layer is inspected for defects and process control metrology (After Develop Inspection (ADI) and metrology) 236 by an inspection tool 238.

The hard mask is then blanket etched through the pattern expressed in the resist layer 240 by an etch tool 242 to express (substantially) the same pattern in the hard mask layer. The resist layer is then removed 244 by a resist removal tool 246, and the material underlying the hard mask is blanket etched through the pattern expressed in the hard mask 248, using an etch tool 250 (e.g., a reactive-ion etch or ion milling tool, generally the same type of tool as etch tool 242), to express (substantially) the same pattern in the underlying (pattern) material (newly added in step 220). The hard mask is then removed 252 using a hard mask removal tool 254. One of ordinary skill in the arts of charged particle beam material deposition will understand that other and/or additional steps can be used in a conventional material deposition process.

T_(i) represents the amount of time added by a corresponding process step. Y_(i) represents the yield impact of a corresponding process step (one minus probability of introducing one or more yield-reducing defects). Where T is the total time taken by a material deposition process, and Y is the expected yield following a material deposition process: T=Σ _(i=1) ^(N) T _(i)  Equation 1: Y=Π _(i=1) ^(N) Y _(i)  Equation 2:

Numerous steps in conventional semiconductor lithography material deposition processes are expensive and time consuming, and potentially introduce defects into the desired pattern, lowering yield. Process-induced defects can be introduced by, for example, wafer handling, resist spin and heating, lithography, resist development, etch, deposition, inspection, implantation, thermal processing, and chemical-mechanical polishing.

SUMMARY

The present application discloses new approaches to systems, devices and methods for precision deposition of material onto a substrate using multiple miniature charged particle columns variously configurable to directly deposit pattern, hard mask and other materials WITHOUT A RESIST LAYER.

In particular, the inventors have discovered that deposition using charged particle beam columns can be significantly accelerated by using local gas and/or photon injectors fixedly located with respect to corresponding ones of the columns, and proximate, oriented towards and having line of sight to corresponding ones of the frames.

Innovatively, local photon injectors can be used to precisely heat the locations targeted by the charged particle beams, to thereby tune the adsorption rate of the surface to be deposited on; to shine photons with a chemistry-characteristic wavelength on the locations targeted by the charged particle beams to tune reaction rate and/or efficiency; and to provide photons reflected or emitted from the substrate surface to local photon detectors for analysis.

Further innovatively, local gas injectors connected to kinetic lenses (collimating or redirecting gas particles towards the frame) can be used to raise partial pressure of process-critical gasses (e.g., deposition, oxidizing or reducing gasses) by orders of magnitude over the average ambient pressure in the vacuum chamber to increase reaction rate.

The inventors have also discovered that local photon detectors and gas detectors, situated locally to and collecting data directly from beam target locations, can be used to monitor and provide feedback to control of charged particle beam columns performing material addition processes, including for example process endpoint detection. Local gas detectors can use kinetic lenses to increase specificity and quantity of collected gasses.

Preferred embodiments of miniature column charged particle beam material addition include material deposition, control and inspection processes that can work directly and automatically from the SAME design layout database. In some embodiments, these and other processes can be implemented together within a single modular tool, allowing patterning of entire layers without breaking vacuum.

Material addition processes can be used to replace conventional deposit material-apply resist-expose resist-develop resist-etch material lithography processes for some or all substrate layers to eliminate numerous lithography steps, increase throughput and dramatically increase yield.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosed inventions will be described with reference to the accompanying drawings, which show important sample embodiments and which are incorporated in the specification hereof by reference, wherein:

FIG. 1 schematically shows an example of a charged particle beam column.

FIG. 2A shows an example of a wafer being scanned by multiple charged particle beams emitted by respective beam columns.

FIG. 2B shows an example of a wafer.

FIG. 2C shows an example of a prior art process for depositing material onto a substrate surface.

FIG. 3A shows an example of a direct material addition process.

FIG. 3B shows an example of a direct material addition process.

FIG. 3C shows an example of a direct material addition process.

FIG. 3D shows an example of a prior art material deposition process.

FIG. 3E shows an example of a direct material addition process.

FIG. 4A schematically shows an example of a local gas injector mounted on a charged particle beam column.

FIG. 4B schematically shows an example of a local gas detector mounted on a charged particle beam column.

FIG. 4C schematically shows an example of a gas injector with a rotational ellipsoid kinetic lens.

FIG. 4D schematically shows an example of a gas injector with a rotational ellipsoid kinetic lens.

FIG. 4E schematically shows an example of a gas injector with a kinetic lens.

FIG. 5 schematically shows an example of a photon injector and a photon detector mounted on a charged particle beam column.

FIG. 6 schematically shows an example of a voltage bias applied between a charged particle beam column and a substrate.

FIG. 7A schematically shows an example of the results of uniform-height material addition.

FIG. 7B schematically shows an example of the results of differentiated-height material addition.

FIG. 8 schematically shows an example of a multiple column charged particle beam system

FIG. 9 schematically shows an example of a charged particle beam cluster tool.

DETAILED DESCRIPTION OF SAMPLE EMBODIMENTS

The numerous innovative teachings of the present application will be described with particular reference to presently preferred embodiments (by way of example, and not of limitation). The present application describes several inventions, and none of the statements below should be taken as limiting the claims generally.

The present application discloses new approaches to systems, devices and methods for precision deposition of material onto a substrate using multiple miniature charged particle columns variously configurable to directly deposit pattern, hard mask and other materials WITHOUT A RESIST LAYER.

In particular, the inventors have discovered that deposition using charged particle beam columns can be significantly accelerated by using local gas/or photon injectors fixedly located with respect to corresponding ones of the columns, and proximate, oriented towards and having line of sight to corresponding ones of the frames.

Innovatively, local photon injectors can be used to precisely heat the locations targeted by the charged particle beams, to thereby tune the adsorption rate of the surface to be deposited on; to shine photons with a chemistry-characteristic wavelength on the locations targeted by the charged particle beams to tune reaction rate and/or efficiency; and to provide photons reflected or emitted from the substrate surface to local photon detectors for analysis.

Further innovatively, local gas injectors connected to kinetic lenses (collimating or redirecting gas particles towards the frame) can be used to raise partial pressure of process-critical gasses (e.g., deposition, oxidizing or reducing gasses) by orders of magnitude over the average ambient pressure in the vacuum chamber to increase reaction rate.

The inventors have also discovered that local photon detectors and gas detectors, situated locally to and collecting data directly from beam target locations, can be used to monitor and provide feedback to control of charged particle beam columns performing material addition processes, including for example process endpoint detection. Local gas detectors can use kinetic lenses to increase specificity and quantity of collected gasses.

Preferred embodiments of miniature column charged particle beam material addition include material deposition, control and inspection processes that can work directly and automatically from the SAME design layout database. In some embodiments, these and other processes can be implemented together within a single modular tool, allowing patterning of entire layers without breaking vacuum.

Material addition processes can be used to replace conventional deposit material-apply resist-expose resist-develop resist-etch material lithography processes for some or all substrate layers to eliminate numerous lithography steps, increase throughput and dramatically increase yield.

The disclosed innovations, in various embodiments, provide one or more of at least the following advantages. However, not all of these advantages result from every one of the innovations disclosed, and this list of advantages does not limit the various claimed inventions.

Enable rapidly writing a pattern layer WITHOUT RESIST;

enable rapidly writing a pattern layer WITHOUT PHOTOMASKS;

improve yield;

faster manufacturing of semiconductor and other substrate devices;

lower cost of manufacturing of semiconductor and other substrate devices;

faster design to manufacturing process;

lower cost of design to manufacturing process;

faster per-layer patterning cycle;

lower cost of per-layer patterning cycle;

lower aggregate tool cost to pattern a substrate layer;

fewer tools required to pattern a substrate layer;

enhance patterning tool configurability;

decrease chemical usage of material in deposition processes;

decrease environmental impact of material in deposition processes;

enable layer patterning, pattern inspection, defect identification and pattern repair without breaking vacuum;

material deposition is LOCALIZED to (and in some embodiments, by) material affected by charged particle beams; and

fewer stage transfers when patterning a substrate layer.

Some exemplary parameters will be given to illustrate the relations between these and other parameters. However it will be understood by a person of ordinary skill in the art that these values are merely illustrative, and will be modified by scaling of further device generations, and will be further modified to adapt to different materials or architectures if used.

“Substrate” is defined herein as a workpiece having a composition and shape amenable to patterning and deposition of one or more layers of material thereupon using techniques applicable to semiconductor device fabrication, such that functional devices can be produced therefrom.

“Material addition” is defined herein as deposition of material onto a substrate surface using one or more electrostatically-deflected charged particle beams; said deposition comprising at least some deposition localized to material directly affected by said beams, and comprising at least some intended (not incidental) deposition of material immediately following said direct affect by said beams. Deposited material can comprise, for example, metal or other functional material, hard mask or other process-related material, or structural material.

The present application is directed to, for example, factory-integrated use of systems comprising multiple miniature charged particle beam columns 206 to create nanometer-scale patterns on semiconductor wafers 200 or other substrates. Arrays of heavily configurable, miniature, non-magnetic, electrostatically-controlled columns 206 can be used to pattern wafers 200 and other substrates directly, without masks, without resist, and without previous lithographic steps. Such systems can be used to achieve massively parallel substrate processing and to reduce stage travel per layer (or other cycle measure) of processing.

Embodiments disclosed herein enable precision processing of materials and, in particular, targeted addition of materials common in the processing of semiconductor wafers 200 and other electrically, magnetically, optically, mechanically, chemically, or biologically active substrates. Such substrates can comprise, for example, workpieces used in fabrication and repair of light emitting diodes (LEDs), giant magnetic resonance (GMR) structures used in thin-film heads, opto-electronic devices (OEDs) used for switching, micro-electro-mechanical systems (MEMS) structures, photonic metamaterials, and patterned substrates used for chemical analysis and genetic sequencing.

Material addition can be performed using one or more multi-column charged particle beam systems using chemical vapor deposition (CVD) (alone, or in concert with other deposition techniques). Material addition processes can be performed either sequentially or simultaneously by multiple columns 206 in an array 802, and different columns 206 in an array 802 can be configured and/or optimized to perform the same material addition (or other) process, or different material addition processes (or other processes, e.g., inspection and metrology).

Material addition can create a layer of pattern specified by the design layout database in its entirety or in a complementary fashion with other patterning processes. For example, material addition can be used to locally interconnect 1-D lines produced by optical lithography. This is similar in design principle to complementary lithography, but without using a resist layer during the charged particle beam phase, and without many of the steps required when using a resist layer; and may advantageously supplement complementary lithography.

In preferred embodiments, the array 802 of charged particle beam columns 206 is stationary, the stage holding the wafer 200 moves back and forth, and individual charged particle beam columns 206 move the corresponding beam 204 across the wafer 200 to perform material addition.

Preferably, beam motion across the wafer 200 (or other substrate) comprises vector scanning to a target feature or “care-area” containing a target feature, and raster scanning across the target feature while writing or inspecting. Preferably, each column 206 has its own local (short communication path) control computer. Vector-raster scanning, care-areas, and use of multiple control computers local to respective columns 206 are disclosed in U.S. patent application Ser. No. 14/085,768, which is incorporated herein by reference. These control methodologies enable areas of interest to be irradiated, while efficiently avoiding areas where material addition (or other charged particle beam function) is not required.

Rapid pattern alignment and registration with superior accuracy (e.g., for minimizing pattern overlay error) can be achieved using imaging targets generated using Hadamard and/or Walsh functions as disclosed in, for example, U.S. patent application Ser. No. 14/522,563, which is incorporated herein by reference.

High beam current can be maintained by minimizing charged-particle crossovers in the columns 206, reducing current-limiting Coulomb effects.

The design layout database is preferably partitioned to designate which column 206 will perform the work for the corresponding substrate writing area. Preferably, writing areas have the same size as column-to-column spacing 210.

In preferred embodiments, different columns 206 can perform material addition (and/or other processes, such as imaging, depending on configuration) on a patterned or unpatterned substrate differently and independently, with beam deflection parameters determining targeted beam landing position based directly (though generally not only; e.g., tool parameter settings are also typically used, and identified areas of interest can be considered, as mentioned above) on a previously-partitioned design layout database used by various column functions (e.g., both material addition and inspection functions). Use of multiple columns 206 to independently and simultaneously write and/or image a substrate, both based directly on the same previously-partitioned design layout database, is disclosed in, for example, U.S. Pat. No. 8,999,627, which is incorporated herein by reference. As used herein, “matched” columns 206 means that columns 206 are “substantially the same”, and stages are “substantially the same”, as “substantially the same” is defined in U.S. Pat. No. 8,999,627. Generally, different matched columns 206 are able to process corresponding different writing areas of a substrate similarly (preferably, nearly identically).

Beam targeting based directly on a design layout database includes, for example, not using a KLA results file (or similar file created by an intermediate inspection tool not using multiple electrostatically-deflected charged particle beam columns 206).

Columns 206 can be configured such that different columns 206 use different physical and chemical processes for highly localized deposition.

Beam column parameters and other parameters can be independently and automatically optimized per-column based on automatically analyzed images taken of deposition results. Automatic image analysis and column parameter optimization are disclosed in, for example, U.S. Pat. No. 8,999,628, which is incorporated herein by reference.

One of ordinary skill in the arts of charged particle beam material deposition will recognize that a wide variety of other control options are available per-column 206.

Preferably, photon injectors 104 and detectors 108, and gas injectors 102 and detectors 106, as described below are “miniature”; that is, they are small enough to position (preferably, fixedly) at or near the bottom of a column 206 (preferably, attach to the column 206 and/or thread through its casing) whichever of said injectors and detectors 102, 104, 106, 108 are required by the embodiment, such that the injector or detector 102, 104, 106, 108 (and particularly the corresponding emitter or collector portion thereof) is located to permit function as described herein.

FIG. 1 schematically shows an example of a charged particle beam column 206 configured for material addition. Preferably, an array 802 of such columns 206 is used to perform material addition (as disclosed with respect to, e.g., FIGS. 3A, 3B, 3C and 8).

As used herein with respect to a gas or photon injector or detector 102, 104, 106, 108, “local” (also “Local” and “LOCAL”) is defined as: mounted in a fixed position with respect to a corresponding one of multiple columns 206, the active emitting or collecting component(s) of said injector or detector 102, 104, 106, 108 having line of sight to and oriented towards the main-field deflection area 410, said active component(s) at least partially contained within the perimeter of the column 206.

An active emitting or collecting component(s) is the optical lens, gas inflow or outflow opening, or kinetic lens 402 that for the respective local injector or detector 102, 104, 106, 108 last emits gas particles or photons towards, or first collects gas particles or photons from, the corresponding main-field deflection area 410. Preferably, said active component(s) is as close as practical to the center of the column's 206 primary axis and to the substrate surface 406 without impacting the substrate surface 406, and without compromising column function (e.g., electrical characteristics of the column 206) or the focus area of the active component(s). Greater proximity is preferred, for example, to preserve collimation or focus, and for gas and photon collection effectiveness, selectivity and efficiency.

Except where stated otherwise, gas and photon injectors 102, 104 and detectors 106, 108 described with respect to the various embodiments disclosed herein are local. Material addition using multiple miniature charged particle beam columns 206 is enabled by the use of LOCAL gas and/or photon injectors and/or detectors 102, 104, 106, 108 as disclosed herein.

Local gas injectors 102 and/or local photon injectors 104 can be used to greatly increase material deposition rates of charged particle beam material addition processes; in some embodiments, sufficiently to provide throughput compatible with in-line fabrication processes. Further, as discussed below with respect to, e.g., FIGS. 3D and 3E, preferred embodiments provide significant yield advantages.

Local photon detectors 108 enable real time detection of spatially localized process endpoints: generally, localized per-column 206 to individual frames 410. Features can be deposited to the correct height, neither shorter nor taller than desired. Further, narrow features can be deposited to the same (or different) height as wide features.

FIG. 1 schematically shows an example of a charged particle beam column 206 configured for material addition, comprising: a charged particle beam gun 110 (an ion gun or electron beam gun, respectively), including a charged particle source (an ion or electron source, respectively), aperture and electrostatic lens; a deflection assembly 112 for blanking the charged particle beam 204, deflecting the charged particle beam trajectory, and/or modifying the charged particle beam shape (blanking, deflecting or reshaping the ion or electron beam 204, respectively); a main lens 114, for focusing the charged particle beam (ion or electron beam 204) or adjusting the beam size at the substrate plane; one or more local gas injectors 102, for increasing partial pressure of deposit gasses, creating oxidizing or reducing environments, or for creating other or additional advantageous chemical environments within the main-field deflection area 410; one or more local photon injectors 104; a local gas detector 106; one or more local photon detectors 108; and an electron detector 116, e.g., to detect secondary electrons, secondary ions, and/or backscattered electrons for CD metrology or overlay and localized process monitoring.

Preferably, configuration of individual columns 206 (e.g., in an array 802, whether and which of, e.g., local injectors and/or detectors 102, 104, 106, 108 are assembled onto individual columns 206 in the array 802) can be altered based on the particular intended application.

Material addition can comprise one or more of (for example) ion-assisted deposition, electron-assisted deposition, and electron-induced cross-linking of polymers.

A local gas injector 102 can be used to increase the partial pressure of precursors and other gas particles within a main-field deflection area 410 significantly (e.g., by multiple orders of magnitude) relative to the average ambient pressure in the vacuum chamber, while having minimal effect on precursor concentration at other main-field deflection areas 410 (corresponding to other columns 206). A kinetic lens 402 (further described below with respect to, e.g., FIGS. 4A, 4B, 4C, 4D and 4E) connected to a local gas injector 102 to collimate or focus the gas injector's 102 output on an area of the substrate surface containing the main-field deflection area 410 of a corresponding column 206 further significantly raises consistently achievable partial pressures (in some embodiments, by multiple orders of magnitude). These large increases in partial pressures of advantageous gasses in a main-field deflection area 410—and thus, at the corresponding charged particle beam impact location—can significantly raise the material deposition rate of the material addition process, e.g., by multiple orders of magnitude.

Generally, gas flow rate can be calculated ahead of time and depends on several parameters, including the particular process to be used (and its required and/or desired chemistry), local temperature (which can be controlled to be substantially constant, within an acceptable range depending on the particular process), the design layout database, and charged particle beam current (which can be constant). If necessary, modifications to gas flow parameters during a material deposition process can be made based on feedback from local detectors.

In a preferred embodiment, gas flow rate is kept above a pre-determined threshold such that supply of gas precursors is not limiting.

A local photon injector 104 is preferably a light source optically connected by an optical fiber to a lens. Local photon injectors 104 emitting infrared (IR) photons can be used to precisely raise the temperature of the substrate at the beam impact location to optimize temperature conditions for the corresponding charged particle beam deposition process, without overheating the substrate as a whole. Preferably, the lens focuses the IR photons on a minimal area containing the main-field deflection area 410. Temperature optimization can be used to increase substrate surface material adsorption rate of precursor and other reactive gasses (higher precursor gas adsorption rate generally correlates to higher material addition rate). Using temperature measured within a known small area containing the beam impact location (e.g., a minimal area containing the main-field deflection area 410), preferably using a local photon detector 108, temperature at the beam impact location can be approximated. By optimizing said temperature conditions, the material deposition rate of the material addition process can be significantly increased.

Desired local temperatures for individual columns 206 can be determined prior to starting a material deposition process, depending on, for example, the design layout database and characteristics of the particular process(es) to be used. Feedback from local temperature measurement can then be used to control brightness and other characteristics (e.g., pulse rate, pulse duration) of the photon injector 102 to precisely control the local temperature of the substrate.

Local photon injectors 104 can also be used to shine photons, with wavelength(s) appropriate to one or more substrate surface materials, on the main-field deflection area 410 to further accelerate certain types of material addition by exciting substrate surface material electrons to a higher energy state. For example, deep UV is characteristic for photochemistry of various materials.

Local photon injectors 104 can also be used to shine photons on the substrate surface material to perform various analyses (process monitoring) of substrate surface material, e.g., polarimetry, reflectometry and/or interferometry. For example, the intensity of reflected injected photons depends on the thickness of the layer (the film) and its optical absorption properties. Preferably, a local photon detector 108 is arranged to collect as many of the reflected photons as possible to optimize the efficacy of such analyses, as shown in FIG. 5. Such photons can generally be of any wavelength, within limits set by available optics and other physical properties.

Endpoint detection refers herein to using detectors to determine when a material addition (e.g., CVD or polymer cross-linking) process has been completed for a particular frame 410 (e.g., when a desired deposition height has been reached). As an ongoing material addition process grows newly deposited material(s) on the substrate surface, the properties of the deposited material(s) increasingly influence measurements of substrate surface 406 properties. Substrate surface material properties (e.g., interferometry results), and rates of change and higher-order derivatives of indicated properties, can be used to accurately determine and/or predict process endpoints.

Process monitoring refers herein to analysis of detected material properties to determine process accuracy and/or produce process performance metrics. Process monitoring can be used to provide process feedback (e.g., to local control computers) that enables process adjustments (e.g., precursor gas flow or beam parameter adjustments, or automatic design layout database modification). Process feedback can occur during, and/or resulting process adjustments can be made for, the frame 410 in which corresponding photons or gas particles were collected, or one or more subsequent frames 410, or one or more subsequent processing cycles (e.g., for a subsequent layer, or for a subsequent substrate).

Local gas detectors 106, using secondary ion mass spectrometry, can be used for process monitoring, e.g., to monitor process reaction rates.

Local photon detectors 108 can be used to detect photons reflected or emitted from the substrate surface 404 near the beam impact location. Detected photons can be used to perform, for example, polarimetry, reflectometry, interferometry, or optical emission spectroscopy on substrate surface material. Substrate surface material properties indicated by such measurements generally include polarization, reflectivity, optical interference, temperature and material composition. Substrate surface material properties, and rates of change and higher-order derivatives of indicated properties, can be used to determine process endpoints, monitor process reaction rates, to monitor the temperature at (or in the vicinity of) the corresponding charged particle beam target impact location, to determine material deposition rate, and for other process monitoring analyses.

Different columns 206 can be configured and/or optimized to perform different (or multiple) types of material addition or other material processing, e.g., some columns 206 can be configured to perform material addition, while other columns 206 are configured to perform imaging (e.g., for alignment, registration and/or wafer inspection). The wide range of per-column 206 configurability disclosed herein means that beam columns 206 can be adapted to and optimized for a wide variety of substrate processing applications.

FIG. 3A shows an example of a direct material addition process 300, with or without a hard mask, and WITHOUT A RESIST LAYER. A design layout database is used to designate where and how material will be deposited 302 on the substrate surface. In embodiments in which a hard mask will be used, a deposition tool 304 (which can be the same tool or type of tool as deposition tool 222) is used to blanket deposit a pattern material 306 on the substrate 404. A multibeam module 308 (e.g., a charged particle beam system 800 or charged particle beam module 902) is then used to perform material addition to directly deposit a hard mask in a pattern designated by the design layout database, using local gas and/or photon injectors 102, 104, and/or local gas and/or photon detectors 106, 108 in step 310. Having grown the designated pattern of hard mask over the pattern material, an etch tool 312 (which can be the same tool or type of tool as etch tool 242 and/or 250) is used to blanket etch the pattern material underlying the hard mask to express the pattern designated by the design layout database in the pattern material 314. A hard mask removal tool 316 then removes the hard mask 318.

Alternatively, when not using a hard mask, after accessing the design layout database 302, the multibeam module 308 can be used to perform material addition directly on the substrate (or other layer) surface using local gas and/or photon injectors 102, 106, and/or local gas and/or photon detectors 104, 108 in step 320.

The material addition process embodiment(s) shown in FIG. 3A dramatically reduces the number of steps required for precise substrate material deposition—and, concomitantly, removes a wide variety of collateral sources of process-induced error, such as a large number of stage transitions—with respect to the prior art process embodiment(s) shown in FIG. 2C. See Equations 1 and 2. Consequently, manufacturing cycle time can be reduced and device yield can be increased using material addition with local injectors and detectors 102, 104, 106, 108 as disclosed herein.

FIG. 3B shows an example of a direct material addition process, with or without a hard mask, and WITHOUT A RESIST LAYER. An embodiment using a hard mask as shown in FIG. 3B comprises steps 302 through 318 as described with respect to FIG. 3A; an embodiment not using a hard mask comprises steps 302 and 320 as described with respect to FIG. 3A. After step 320 or step 318 (respectively), a different material (other than the pattern material deposited in step 306) is blanket deposited 330, and the excess of the different material is removed 332 using, e.g., chemical-mechanical planarization (CMP).

FIG. 3C shows an example of a direct material addition process WITHOUT A RESIST LAYER. A design layout database is used to designate where and how material will be deposited on the substrate surface 302. Material addition, using local gas and/or photon injectors and/or detectors, is used to directly deposit material on the substrate surface 320. The deposited material is then used as a positive pattern for selective deposition or used as a negative pattern for selective deposition (like a stencil) to prepare the substrate surface for blanket deposition. When additional material is blanket deposited on the substrate, it either grows over the directly deposited material (positive pattern) and does not grow where the directly deposited material is not 340; or the blanket deposited additional material grows where the directly deposited material is not (negative pattern) and does not grow over the directly deposited material 342.

FIG. 3D shows an example of a prior art substrate material deposition process (see FIG. 2C). FIG. 3E shows an example of a material addition process (see FIG. 3A).

Comparison between the prior art embodiment(s) of FIG. 3D and the innovative embodiment(s) of FIG. 3E helps to clarify the dramatic process simplification, and improvement in efficiency and yield potential, achieved by using multiple (preferably a large array 802 of) miniature electrostatically-controlled charged particle beam columns 206, together with corresponding local gas and photon injectors and detectors 102, 104, 106, 108, to perform material addition.

FIG. 4A schematically shows an example of a local gas injector 102 mounted on a charged particle beam column 206. The gas injector preferably 102 includes a kinetic lens 402, comprising a smooth rigid body (preferably made of metal), to increase the partial pressure of gas at the focal point of the kinetic lens 402 on the substrate 404 surface 406 by focusing or collimating the gas particle flow from the gas injector outflow opening 408. Various designs of kinetic lens 402 are possible; the example shown in FIG. 4A is a cylindrical kinetic lens 402.

The gas injector 102 is connected to one or more gas sources, comprising the gas(ses) to be injected by the gas injector 102 to create or assist in creating a desired chemical environment at the main-field deflection area 410 on the surface of the substrate 406. Multiple gas injectors 102, injecting the same or different gasses, can be used.

Preferably, one or more local gas injectors 102 is configured to inject a precursor deposition gas per column 206 performing material addition. Local gas injectors 102 are preferably mounted on or near the bottom of corresponding columns 206, as close to corresponding main-field deflection areas 410 as possible. (A main-field deflection area 410 is generally in a fixed position relative to the corresponding column 206, and moves across the substrate's surface 406 as the stage moves).

Gas flow from a local gas injector 102 is preferably limited to the molecular flow regime (not viscous flow) to enable proper function of a kinetic lens 402 connected to the gas injector outflow opening 408. (If the gas flow is in a viscous flow regime, the kinetic lens 402 will generally not function as a lens.) In the molecular flow regime (“molecular flow”), the mean free path for gas particles (atoms or molecules of the gas) is large compared to a characteristic dimension of the local gas injector 102 or detector 106 (e.g., the path taken by gas particles between the substrate surface 406 and the gas outflow or inflow opening 408, 414). This makes it much more likely that gas particles will collide 412 with the side of the lens 402, or (for a gas injector 102) the substrate surface 406, or (for a gas detector 106) enter the gas inflow opening 408, before hitting another gas particle.

A “kinetic lens” 402 is an arrangement of one or more smooth and rigid, flat and/or curved surfaces configured to reflect gas particles, fixed in position with respect to a corresponding gas injector outflow opening 408 or gas detector inflow opening 414; such that (for a gas injector) gas particles originating at a gas injector outflow opening which intersect 412 with the kinetic lens 402 are collimated or redirected (e.g., focused) towards the corresponding main-field deflection area 410; and such that (for a gas detector 106) gas particles originating at the beam impact location (or the main-field deflection area 410) which intersect 412 with the kinetic lens 402 are redirected (e.g., focused) towards the gas detector inflow opening 414. (Generally, surfaces of a kinetic lens 402 can be thought of as similar to optical mirrors, but for gas particles.) Various designs of kinetic lens 402 can be used (see, for example, FIGS. 4A, 4B, 4C, 4D and 4E).

Preferably, kinetic lens 402 surfaces are arranged so that they do not prevent particles (atoms or molecules) of outflow gas within the kinetic lens 402 from reaching the substrate surface 404; and do not prevent particles of inflow gas within the kinetic lens 402, originating from the main-field deflection area 410 of the corresponding column 206, from reaching the inflow opening 414.

A kinetic lens 402 can be used to improve localization to the main-field deflection area 410 of increased partial pressure of an injected gas. A kinetic lens 402 can also be used to increase specificity and collection rate for a gas detector 106. “Specificity”, as used herein, refers to the selectiveness of a gas detector 106 corresponding to a column 206 for material that originated within a corresponding frame 410 and not from, e.g., the frame 410 of another column 206.

FIG. 4B schematically shows an example of a local gas detector 106 mounted on a charged particle beam column 206. Preferably, a local gas detector 106 comprises a gas inflow opening 414 connected to a kinetic lens 402 configured to redirect gas particles intersecting 412 the kinetic lens 402 into the gas inflow opening 414. The gas inflow opening 414 is connected to a secondary ion mass spectrometer configured to analyze incoming gas particles and perform process monitoring and provide control feedback using said analysis.

FIG. 4C schematically shows an example of a gas injector 102 with a rotational ellipsoid kinetic lens 402.

FIG. 4D schematically shows an example of a gas detector 106 with a rotational ellipsoid kinetic lens 402.

A kinetic lens 402 is preferably shaped as a (truncated) rotational ellipsoid (an ellipsoidal reflector, with two equal minor axes and a longer major axis). Advantageously, gas particles which originate at one major axis focus and which intersect the kinetic lens 402 surface are reflected towards and converge at the other major axis focus. Preferably, one major axis focus of the rotational ellipsoid is located at the main-field deflection area 410 on the substrate surface, and the other major axis focus is located at the gas outflow or inflow opening 408, 414 (which can be modeled as a point source or point sink, respectively, for this purpose).

Preferred embodiments using gas injectors 102 use rotational ellipsoid kinetic lenses 402 configured such that gas particles originating at the gas injector outflow opening 408 that intersect 412 the kinetic lens surface 402 are reflected towards the main-field deflection area 410, increasing partial pressure of the gas in the frame 410.

Preferred embodiments using gas detectors 106 use rotational ellipsoid kinetic lenses 402 configured such that gas particles originating in the main-field deflection area 410 are reflected towards the gas detector inflow opening 414, significantly improving gas detector 106 collection efficiency and specificity (thus improving, e.g., sensitivity and signal to noise ratio of gas spectrometer measurement and analysis).

FIG. 4E shows an example of a gas injector 102 or gas detector 106 with a kinetic lens 402. Approximations of a rotational ellipsoid can be made using flat and/or curved surfaces configured to reflect (at least some trajectories of) gas particles originating at one (approximate) focus towards the other (approximate) focus.

FIG. 5 schematically shows an example of a photon injector 104 and a photon detector 108 mounted on a charged particle beam column 206. Preferably, a photon injector 104 comprises a light source optically connected by an optical fiber to a (cylindrical) rod lens focused on the main-field deflection area 410; and a photon detector 108 comprises a light sensor optically connected by an optical fiber to a rod lens focused on the main-field deflection area 410.

Photon injectors 104 and photon detectors 108 can be used as discussed with respect to FIG. 1 above. Further, as shown in FIG. 5, a photon injector 104 and photon detector 108 pair can be arranged so that photons emitted by a photon injector 104 are reflected off the substrate 404 and collected by the paired photon detector 108. The photon injector 104 used for this purpose can be used specifically to provide photons for the photon detector 108 to perform, e.g., polarimetry, reflectometry, interferometry or optical emission spectroscopy. Alternatively, the photon injector 104 may be dual-purpose, e.g., the detected photons may be IR photons emitted by the photon injector 104 for temperature control, or photons emitted to excite substrate surface material electrons or adsorbed material electrons to facilitate a desired substrate surface chemistry.

Injected photons can also be pulsed, e.g., to enable local temperature measurement, or optical emission spectroscopy of photons emitted by substrate surface material, in between pulses.

A cooled substrate stage 804 (e.g., indirectly cooling the substrate through the chuck) can also be used to increase the adsorption rate of precursor and other reactant gases on the substrate 404, and/or to keep the average temperature of the substrate approximately constant at a designated temperature (and that temperature can be modified locally by photon injectors 104). The average temperature of the substrate 404 can be monitored and controlled by a substrate temperature control 502.

FIG. 6 schematically shows an example of a voltage bias 602 applied between a charged particle beam column 206 and a substrate 404 to create highly localized control of charged particle impact over a wide range of energies.

Substrate stage electrical bias 602 can be used, along with control of beam energy at each column 206, to optimize the efficiency of charged-particle induced chemistry and/or physical effects. Preferably, beam energy is constant (or changes slowly and/or rarely). As the desired substrate surface chemistry changes (which can include, for example, a gas injector output changing), the electrical bias 602 of the substrate stage can be changed so that the total landing energy of an individual charged particle beam 204 (including energy contributed by the substrate stage electrical bias) is (or is significantly closer to) the landing energy that will optimize the rate and/or efficiency of the desired reaction(s), e.g., dissociation of adsorbed deposition precursor gas(ses).

FIG. 7A schematically shows an example of the results of uniform-height material addition, including uniform-height features 702.

FIG. 7B schematically shows an example of the results of differentiated-height material addition, including differentiated-height features 704. Columns 206 can be configured independently to process material simultaneously but differently; e.g., to write different patterns to different heights at different rates using, e.g., different beam parameters or different numbers of beam passes for different target locations. Since columns 206 are controlled independently, they can be used to create local variations in pattern height (e.g., 3-D topography). Differentiated-height material addition, which can create 3-D structures, can be achieved by varying, for example, exposure time, dose, local precursor partial pressure, or local precursor chemistry beneath a charged particle beam column 206 as the targeted beam position is moved.

FIG. 8 schematically shows an example of a multiple column charged particle beam system 800. An appropriately configured multi-column charged particle beam system 800 can be used for highly localized material addition using, for example, electron-assisted deposition, ion-assisted deposition, or electron-induced polymer cross-linking. The system shown in FIG. 8 includes an array 802 of miniature charged particle beam columns 206, a thermally controlled wafer stage 804, a wafer loading and unloading mechanism 806, control electronics, a vacuum system, an alignment system, vibration isolation and magnetic shielding. Depending on (for example) the particular material addition application intended, a multi-column charged particle beam system 800 preferably also includes one or more of local gas injectors 102, local photon injectors 104, local gas detectors 106 and local photon detectors 108.

FIG. 9 schematically shows an example of a charged particle beam cluster tool 900. A charged particle beam cluster tool 900 comprises multiple charged particle beam modules 902. An individual charged particle beam module 902 comprises an array 802 of charged particle beam columns 206 in ultra high vacuum, as well as a wafer stage 804 and alignment mechanism. Individual modules 902, and/or individual columns 206 within a module 902, can be configured to specialize in a particular type of charged particle beam substrate processing. For example, one module 902 can be configured for material addition using electron-assisted deposition, while a second module 902 is configured for material addition using electron-induced polymer cross-linking. In another example, some columns 206 in a module 902 can be configured to perform electron-assisted deposition (not necessarily all using the same configuration), while other columns 206 in that module 902 are configured and optimized for substrate inspection using electron beam imaging.

In addition to process modules 902, a cluster tool 900 generally also comprises a substrate handling system 904, a substrate loading/unloading system 906 and a factory interface. Within a cluster tool 900, a wafer transport system 908 delivers wafers to one or more—in some embodiments, all (e.g., sequentially)—of the tool's process modules 902, and can also perform in-vacuum pre-alignment. Other sub-systems necessary for charged particle beam control, gas injection, and substrate processing are not depicted (e.g. control electronics, vacuum systems, alignment systems, vibration isolation, magnetic shielding and gas injection flow control and measurement).

As will be understood by one of ordinary skill in the arts of charged particle beam material deposition, focus areas described in this application of gas and photon injectors and detectors 102, 104, 106, 108 (typically, the main-field deflection area 410) are approximate; that is, they comprise the described area, within (plus or minus) the range or error allowed by the particular process (and/or application) performed by the corresponding column 206, such that the desired function, effect and/or accuracy of that process (and/or application) are preserved.

According to some but not necessarily all embodiments, there is provided: A method for targeted addition of material onto the substrate using multiple charged particle beam columns, individual columns projecting individual charged particle beams at the substrate, comprising the actions of: depositing material onto the substrate surface using the beams, columns corresponding to the beams targeting different corresponding locations in different frames on the substrate, said depositing immediately subsequent to said material receiving direct affect by said beams; and injecting at least one gas, using local gas injectors, onto multiple ones of said frames, wherein said gas is selected to enable, and/or to improve the rate and/or efficiency, of said depositing, and wherein said depositing and said injecting are performed differently and simultaneously by different ones of said columns and said local gas injectors.

According to some but not necessarily all embodiments, there is provided: A method for targeted addition of material onto the substrate using multiple charged particle beam columns, individual columns projecting individual charged particle beams at the substrate, comprising the actions of: depositing material onto the substrate surface using the beams, columns corresponding to the beams targeting corresponding different locations on the substrate, said depositing immediately subsequent to said material receiving direct affect by said beams; collecting, using local gas detectors, material volatilized or scattered from frames corresponding to said local gas detectors; analyzing said collected material; and automatically modifying parameters controlling said depositing in at least partial dependence on said analyzing, wherein said depositing is performed differently and simultaneously by different ones of said columns.

According to some but not necessarily all embodiments, there is provided: A method for targeted addition of material onto the substrate using multiple charged particle beam columns, individual columns projecting individual charged particle beams at the substrate, comprising the actions of: depositing material onto the substrate surface using the beams, columns corresponding to the beams targeting different corresponding locations in different frames on the substrate, said depositing immediately subsequent to said material receiving direct affect by said beams; and injecting photons onto multiple ones of said frames using local photon injectors, said photons having a wavelength selected to, within corresponding ones of said frames, do at least one of: raising the temperature of the substrate surface material, exciting electrons of said substrate surface material, and reflecting photons off said corresponding frame to be collected by a local photon detector, wherein said depositing and said injecting are performed differently and simultaneously by different ones of said columns and said local photon injectors.

According to some but not necessarily all embodiments, there is provided: A method for targeted addition of material onto the substrate using multiple charged particle beam columns, individual columns projecting individual charged particle beams at the substrate, comprising the actions of: depositing material onto the substrate surface using the beams, columns corresponding to the beams targeting different corresponding locations in different frames on the substrate, said depositing immediately subsequent to said material receiving direct affect by said beams; and collecting photons emitted or reflected from said frames using local photon detectors, analyzing said collected photons, and at least one of: determining endpoints for said depositing in at least partial dependence on said analyzing, wherein said depositing is performed in at least partial dependence on said determining; and automatically modifying parameters controlling said depositing in at least partial dependence on said analyzing; wherein said depositing is performed differently and simultaneously by different ones of said columns.

According to some but not necessarily all embodiments, there is provided: A multibeam tool for manufacturing substrate devices, comprising: multiple electrostatically-deflected charged particle beam columns, individual ones of said columns configured to project an individual charged particle beam at the substrate; multiple LOCAL gas injectors, at least one LOCAL gas injector corresponding to each of said columns.

According to some but not necessarily all embodiments, there is provided: A multibeam tool for manufacturing substrate devices, comprising: multiple electrostatically-deflected charged particle beam columns, individual ones of said columns configured to project an individual charged particle beam at the substrate; multiple LOCAL gas detectors, at least one LOCAL gas detector corresponding to each of said columns.

According to some but not necessarily all embodiments, there is provided: A multibeam tool for manufacturing substrate devices, comprising: multiple electrostatically-deflected charged particle beam columns, individual ones of said columns configured to project an individual charged particle beam at the substrate; multiple LOCAL photon injectors, at least one LOCAL photon injector corresponding to each of said columns.

According to some but not necessarily all embodiments, there is provided: A multibeam tool for manufacturing substrate devices, comprising: multiple electrostatically-deflected charged particle beam columns, individual ones of said columns configured to project an individual charged particle beam at the substrate; multiple LOCAL photon detectors, at least one LOCAL photon detector corresponding to each of said columns.

Modifications and Variations

As will be recognized by those skilled in the art, the innovative concepts described in the present application can be modified and varied over a tremendous range of applications, and accordingly the scope of patented subject matter is not limited by any of the specific exemplary teachings given. It is intended to embrace all such alternatives, modifications and variations that fall within the spirit and broad scope of the appended claims.

In some embodiments, multibeam tools comprising electrostatically-deflected charged particle beam columns using local gas and/or photon injectors and/or detectors can also be used to perform other substrate manufacturing processes, particularly: removal of substrate materials from the substrate surface as designated by a design layout database and localized to substrate positions directly affected by said beams (material subtraction); and modification of physical and chemical properties, structure and composition of substrate surface material as designated by a design layout database and localized to substrate surface material directly affected by said beams (material modification).

Though particular types of material addition processes have been described hereinabove, other charged particle beam-assisted or -induced material addition processes can also be used.

In some embodiments, ion beam columns can be matched to electron beam columns by calibrating deflection parameters (and/or other column parameters) to take into account beam composition (and other column configuration) differences.

In some embodiments, ion beam columns are matched to ion beam columns, and electron beam columns are matched to electron beam columns, but ion beam columns are not matched to electron beam columns.

In some embodiments, patterns can be designed to increase the average number of features per frame that contains features, and/or to increase the number of frames that contain no features; e.g., to take advantage of per-frame localization of endpoint detection and process monitoring, and/or to improve signal-to-noise ratio of process measurements and analysis.

In some embodiments, a column (i.e., with particular injectors and/or detectors) can be used to perform more than one material addition process type or other substrate process (e.g., imaging for purposes of defect detection) without changing the column's physical configuration.

In some embodiments, a physical configuration of a column can be specialized and/or optimized to perform a single material addition process type or other substrate process (e.g., imaging for purposes of defect detection).

In some embodiments, the body of an injector or detector interpenetrates the housing of a column (without interfering with charged particle beam path-related structures, or the beam itself).

In some embodiments, in which there is a mechanical impediment preventing making an injector or detector local, the injector or detector is located outside the perimeter of the corresponding column but within the writing area of the column.

In some embodiments, a local injector or detector is located between the column and the substrate surface.

In some embodiments (e.g., for some material addition processes and/or applications and/or other substrate manufacturing processes), there is a linear proportionality between gas partial pressure increase within the main-field deflection area and material addition rate (e.g., when gas partial pressure is the rate-limiting parameter).

In some embodiments, one or more columns perform material addition corresponding to multiple layers of pattern in a single pass—e.g., within a single process cycle, on multiple layers in one or more frames (separate main-field deflection areas). In some such embodiments, different material addition process types are used to perform material addition on different ones of said multiple layers in a particular frame.

In some embodiments, material addition is used to add a single atomic layer of pattern material.

In some embodiments, local gas and/or photon detectors can be used to generate persistent per-column performance metrics.

In some embodiments, gas and/or photon injection can be performed prior to charged particle beam scanning, e.g., to prepare the substrate surface in advance.

Though particular combinations of local gas and photon injectors, and local gas, photon and electron detectors have been described herein, one of ordinary skill in the arts of material deposition using charged particle beams will understand that various other combinations (in various physical arrangements), including some or all of said local injectors and detectors, with one or more of ones of said injectors and detectors local per column, can be used to configure a column and to perform material addition as disclosed herein.

In some embodiments, local detectors (local and corresponding to one or more columns) can be limited to local electron detectors used for critical dimension (CD) metrology or overlay (accurate placement of a pattern layer over one or more prior pattern layers), local photon detectors used for localized temperature monitoring, and local gas detectors used for localized process monitoring.

In some embodiments, local detectors can be limited to local electron detectors used for CD metrology or overlay, localized process monitoring and end point detection.

In some embodiments, local detectors can be limited to local photon detectors used for localized process monitoring and end point detection, e.g., in applications where overlay is not required, such as single-layer photomask patterning.

In some embodiments, a local gas injector focuses gas particles on an area larger than the main-field deflection area; in some embodiments, a local photon injector does so for advance preparation of adjacent frames.

In some embodiments, a local gas detector can be used to perform analysis of gas particles with techniques other than secondary ion mass spectrometry.

In some embodiments, a kinetic lens is atomically smooth.

In some embodiments, the largest diameter of a kinetic lens is significantly larger than the diameter of the corresponding gas outflow or inflow opening.

In some embodiments, a kinetic lens is fixedly connected to a gas injector outflow or a gas detector inflow so that gas particles cannot escape from the connection between the kinetic lens and the corresponding gas outflow or inflow opening.

In some embodiments, a kinetic lens is wholly or partially nonmetallic.

In some embodiments, a kinetic lens is shaped such that few or no possible gas particle trajectories originating at an intended gas particle source (generally, the main-field deflection area or a corresponding gas injector opening) will result in a gas particle being “trapped” within the kinetic lens. In some embodiments, a kinetic lens is shaped such that few or no possible gas particle trajectories originating at an intended gas particle source will be reflected by the kinetic lens such that the gas particle moves closer to said source and further from the intended destination (generally, a corresponding gas detector opening or the main-field deflection area).

In some embodiments, a frame-facing kinetic lens opening is smaller than the largest diameter (orthogonal to the main axis) of the kinetic lens.

While particular examples of kinetic lens shapes have been described hereinabove, it will be apparent to one of ordinary skill in the arts of charged particle beam substrate material deposition that other kinetic lens shapes can also be used to stochastically increase partial pressure in the main-field deflection area (e.g., through gas flow collimation and focusing). For example, ellipsoids with three different axes, paraboloidal reflectors, or elongated truncated tapering flat-sided or curved-sided horns.

In some embodiments, photon injectors and/or photon detectors can be fixed in position with respect to a corresponding individual column and disposed non-locally to that corresponding column, as long as they are able to focus sufficient emitted photons on, or collect sufficient emitted photons from, the main-field deflection area of said corresponding column (or larger area within the corresponding writing area) to effectively function in support of the particular material addition process(es) in which they are used.

In some embodiments, one or more lasers, e.g., diode lasers, provide the light source for a local photon injector.

In some embodiments, wavelength and/or wavelength range and/or distribution of photons emitted by a photon injector is tunable.

In some embodiments, non-local photon injectors are used, ones of said photon injectors fixed in position with respect to corresponding columns and having line of sight on a desired irradiation area within the corresponding writing area.

In some embodiments, non-local photon detectors are used, ones of said photon detectors fixed in position with respect to corresponding individual ones of the columns and having line of sight on a desired photon collection area within the corresponding writing area.

In some embodiments, a local photon injector focuses emitted photons on an area within the main-field deflection area.

In some embodiments, a local photon injector focuses emitted photons on an area larger than the main-field deflection area; in some embodiments, a local photon injector does so for advance preparation of adjacent frames.

In some embodiments, a local photon detector is arranged to collect reflected IR photons to perform process monitoring, where said IR photons were also used to increase the temperature of the substrate.

In some embodiments, other or additional analyses are performed on collected photons than those listed hereinabove.

In some embodiments, other or additional properties of substrate surface material are determined using analysis of detected photons than those listed hereinabove.

In some embodiments, photon injectors shine photons with one or more wavelengths between infrared and deep UV on the main-field deflection area.

In some embodiments, one or more local photon injectors are not paired with corresponding photon detectors, such that reflected light from the unpaired photon injectors will generally not be detected. In some embodiments, one or more local photon detectors are not paired with corresponding photon injectors, such that the unpaired photon detectors will primarily detect emitted (from the substrate surface), rather than reflected light.

A person of ordinary skill in the arts of charged particle beam substrate material deposition will recognize that a variety of optical lens materials and shapes, and optical connections between light sources and optical lenses, can be used for photon injectors and detectors; and that a variety of light sources can be used for photon injectors.

In some photon injector embodiments, a light source and an optical lens are directly connected. In some photon detector embodiments, an optical lens and a sensor are directly connected. One of ordinary skill in the arts of charged particle beam material deposition will understand that various types of connection between light source and optical lens, between sensor and optical lens, between gas injector outflow and gas source, and between gas detector inflow and mass spectrometer can be used.

In some embodiments, such as when a “shadowing” effect is anticipated such that one or more photon or gas injectors will not have line-of-sight on a target beam impact location during (at least one period of) a material addition process (generally, as a result of particular 3-D geometry being formed), two or more photon or gas injectors (respectively, spaced at, e.g., 90 or 180 degree increments) can be used so that when a photon or gas injector is “shadowed”, one or more of the other photon or gas injectors will have line of sight on the target beam impact location.

In some embodiments, material addition as disclosed herein can be used in combination with other substrate processing procedures (e.g., optical lithography and/or charged particle beam lithography) that use resist and/or photomasks to produce semiconductor and other substrate devices.

Additional general background, which helps to show variations and implementations, may be found in the following publications, all of which are hereby incorporated by reference: http://www.ece.umd.edu/class/enee416/GroupActivities/Damascene%20Presentation.pdf (accessed Jun. 9, 2015); Ivo Utke, et al., “Gas-assisted focused electron beam and ion beam processing and fabrication”, J. Vac Sci. Technol. B 26(4), 1197-1276, July/August 2008; and Michael Huth, et al., “Focused electron beam induced deposition: A perspective”, Beilstein J. Nanotechnol., August 2012, 3, 597-619; U.S. Pat. No. 6,355,994; U.S. Pat. No. 6,617,587; U.S. Pat. No. 6,734,428; U.S. Pat. No. 6,738,506; U.S. Pat. No. 6,777,675; U.S. Pat. No. 6,844,550; U.S. Pat. No. 6,872,958; U.S. Pat. No. 6,943,351; U.S. Pat. No. 6,977,375; U.S. Pat. No. 7,122,795; U.S. Pat. No. 7,227,142; U.S. Pat. No. 7,435,956; U.S. Pat. No. 7,456,402; U.S. Pat. No. 7,462,848; U.S. Pat. No. 7,786,454; U.S. Pat. No. 7,928,404; U.S. Pat. No. 7,941,237; U.S. Pat. No. 8,242,457; U.S. Pat. No. 8,384,048; U.S. Pat. No. 8,999,627; and U.S. Pat. No. 8,999,628.

Additional general background, which helps to show variations and implementations, as well as some features which can be implemented synergistically with the inventions claimed below, may be found in the following US patent applications. All of these applications have at least some common ownership, copendency, and inventorship with the present application, and all of them, as well as any material directly or indirectly incorporated within them, are hereby incorporated by reference: U.S. patent application Ser. No. 14/085,768; U.S. patent application Ser. No. 14/703,306; U.S. patent application Ser. No. 14/607,799; U.S. patent application Ser. No. 14/607,821; U.S. patent application Ser. No. 14/522,563; U.S. patent application Ser. No. 14/523,909; U.S. patent application Ser. No. 14/694,710; U.S. patent application Ser. No. 14/695,767; U.S. patent application Ser. No. 14/695,776; and U.S. patent application Ser. No. 14/695,785.

None of the description in the present application should be read as implying that any particular element, step, or function is an essential element which must be included in the claim scope: THE SCOPE OF PATENTED SUBJECT MATTER IS DEFINED ONLY BY THE ALLOWED CLAIMS. Moreover, none of these claims are intended to invoke paragraph six of 35 USC section 112 unless the exact words “means for” are followed by a participle.

The claims as filed are intended to be as comprehensive as possible, and NO subject matter is intentionally relinquished, dedicated, or abandoned. 

What is claimed is:
 1. A method for targeted addition of material onto the substrate using multiple charged particle beam columns, individual columns projecting individual charged particle beams at the substrate, comprising the actions of: depositing material onto the substrate surface using the beams, columns corresponding to the beams targeting different corresponding locations in different frames on the substrate, said depositing immediately subsequent to said material receiving direct affect by said beams; and injecting at least one gas, using local gas injectors, onto multiple ones of said frames, wherein said gas is selected to enable, and/or to improve the rate and/or efficiency, of said depositing, and wherein said depositing and said injecting are performed differently and simultaneously by different ones of said columns and said local gas injectors.
 2. The method of claim 1, wherein different columns target different writing areas.
 3. The method of claim 1, wherein said column targeting and said injecting are performed in at least partial dependence on the design layout database of the substrate.
 4. The method of claim 1, wherein said injecting increases the partial pressure of said gas at said frames by at least one order of magnitude over the average ambient vacuum chamber pressure.
 5. The method of claim 1, wherein different gasses are injected onto at least some different frames and/or different ones of said gas injectors inject different gasses.
 6. The method of claim 1, wherein said injecting by a one of said gas injectors local to one of the columns increases partial pressure of said gas within frames of other columns with respect to average ambient pressure within the vacuum chamber by no more than 10%.
 7. The method of claim 1, wherein said gas is injected in the molecular flow regime, further comprising redirecting said gas from said local gas injectors onto corresponding frames using kinetic lenses.
 8. The method of claim 1, further comprising collecting gas particles originating within said frames using local gas detector; analyzing said collected gas particles; and automatically modifying parameters controlling said depositing in at least partial dependence on said analyzing.
 9. The method of claim 8, wherein said modified parameters are used to perform said depositing on the same substrate layer as said collecting was performed on.
 10. The method of claim 8, wherein said modifying comprises changing the flow rate and/or timing of said injecting by corresponding ones of said local gas injectors.
 11. The method of claim 1, further comprising collecting photons emitted or reflected from said frames using local photon detectors; analyzing said collected photons; and at least one of: determining endpoints for said depositing in at least partial dependence on said analyzing, wherein said depositing and/or said injecting are performed in at least partial dependence on said determining; and automatically modifying parameters controlling said depositing and/or said injecting in at least partial dependence on said analyzing.
 12. The method of claim 1, further comprising injecting photons onto multiple ones of said frames using local photon injectors, said photons having a wavelength selected to, within corresponding ones of said frames, do at least one of: raising the temperature of the substrate surface material; exciting electrons of said substrate surface material; and reflecting photons off said corresponding frame to be collected by a local photon detector.
 13. The method of claim 1, wherein ones of the beams are either ion beams or electron beams, and said depositing comprises at least one of ion-assisted deposition, electron-assisted deposition and electron-induced polymer cross-linking.
 14. The method of claim 1, further comprising applying a voltage bias to the substrate configured to adjust the landing energies of the beams.
 15. The method of claim 1, wherein said depositing material onto the substrate surface deposits hard mask material, further comprising blanket depositing different material onto the substrate before said depositing, and blanket etching said different material underlying said hard mask after said depositing.
 16. The method of claim 15, further comprising removing said hard mask after said blanket etching.
 17. The method of claim 1, wherein said at least one gas comprises a precursor gas, further comprising injecting oxidizing or reducing gasses onto said frames using said local gas injectors.
 18. The method of claim 1, wherein neither a photomask nor a resist layer is used by said depositing.
 19. The method of claim 1, wherein different ones of the columns and/or of said local gas injectors stop and/or restart at different times said projecting and/or said injecting, respectively, during a process cycle.
 20. The method of claim 1, wherein said depositing does not comprise depositing hard mask material.
 21. A method for targeted addition of material onto the substrate using multiple charged particle beam columns, individual columns projecting individual charged particle beams at the substrate, comprising the actions of: depositing material onto the substrate surface using the beams, columns corresponding to the beams targeting corresponding different locations on the substrate, said depositing immediately subsequent to said material receiving direct affect by said beams; collecting, using local gas detectors, material volatilized or scattered from frames corresponding to said local gas detectors; analyzing said collected material; and automatically modifying parameters controlling said depositing in at least partial dependence on said analyzing, wherein said depositing is performed differently and simultaneously by different ones of said columns.
 22. The method of claim 21, further comprising increasing specificity of local gas detectors for material originating within corresponding ones of the frames using kinetic lenses.
 23. The method of claim 21, further comprising redirecting material into inflow openings of corresponding ones of said local gas detectors using kinetic lenses.
 24. The method of claim 21, wherein said analyzing determines endpoints for said depositing, and wherein said modifying changes parameters controlling real-time endpoint determination using local photon detectors.
 25. The method of claim 21, wherein said gas detectors use secondary ion mass spectrometry.
 26. The method of claim 21, wherein said modified parameters are used to perform said depositing on the same pattern layer as said collecting was performed on.
 27. The method of claim 21, wherein different columns target different writing areas.
 28. The method of claim 21, wherein said column targeting and said analyzing are performed in at least partial dependence on the design layout database of the substrate.
 29. The method of claim 21, wherein ones of the beams are either ion beams or electron beams, and said depositing comprises at least one of ion-assisted deposition, electron-assisted deposition and electron-induced polymer cross-linking.
 30. The method of claim 21, further comprising applying a voltage bias to the substrate configured to adjust the landing energies of the beams.
 31. The method of claim 21, wherein said depositing material onto the substrate surface deposits hard mask material, further comprising blanket depositing different material onto the substrate before said depositing, and blanket etching said different material underlying said hard mask after said depositing.
 32. The method of claim 21, wherein neither a photomask nor a resist layer is used by said depositing.
 33. The method of claim 21, wherein said depositing does not comprise depositing hard mask material. 